MemSens: Memristor-Based Radiation Sensor

Document Type

Article

Source of Publication

IEEE Sensors Journal

Publication Date

4-15-2018

Abstract

© 2001-2012 IEEE. Resistive random-access memory (RRAM) technology has been gaining importance due to scalability, low power, non-volatility, and the ability to perform in-memory computing. The RRAM sensing applications have also emerged to enable single RRAM technology platforms which include sensing, data storage, and computing. This paper reports on sol-gel drop coated low-power μ -thick Ag/TiO2/Cu memristor, named MemSens, developed for radiation sensing. MemSens exhibits a bipolar memristive switching behavior within a small voltage window, ranging up to +0.7 V for the turn-ON, and down to -0.2 V for the turn-OFF. Under these operating conditions, MemSens has 67% less switching voltage, 20% drop in ON switching current, 75% reduced active area and > 3x improved device endurance, compared to the best characteristics reported in the literature for μ -thick memristors. The device is tested under direct exposure to ionizing Cs-137 662keV γ -rays, during which a significant increase in the electrical conductivity of the device is observed. MemSens circuit is proposed to allow a relatively real time and cost-effective radiation detection. This provides a first insight to the advancement of reliable memristors that could potentially be deployed in future low-power radiation sensing technologies for medical, personal protection, and other field applications.

ISSN

1530-437X

Publisher

Institute of Electrical and Electronics Engineers Inc.

Volume

18

Issue

8

First Page

3198

Last Page

3205

Disciplines

Electrical and Computer Engineering

Keywords

active, bipolar, crossbar, endurance, Low power, radiation, sol-gel

Scopus ID

85042352197

Indexed in Scopus

yes

Open Access

no

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