MemSens: Memristor-Based Radiation Sensor
Source of Publication
IEEE Sensors Journal
© 2001-2012 IEEE. Resistive random-access memory (RRAM) technology has been gaining importance due to scalability, low power, non-volatility, and the ability to perform in-memory computing. The RRAM sensing applications have also emerged to enable single RRAM technology platforms which include sensing, data storage, and computing. This paper reports on sol-gel drop coated low-power μ -thick Ag/TiO2/Cu memristor, named MemSens, developed for radiation sensing. MemSens exhibits a bipolar memristive switching behavior within a small voltage window, ranging up to +0.7 V for the turn-ON, and down to -0.2 V for the turn-OFF. Under these operating conditions, MemSens has 67% less switching voltage, 20% drop in ON switching current, 75% reduced active area and > 3x improved device endurance, compared to the best characteristics reported in the literature for μ -thick memristors. The device is tested under direct exposure to ionizing Cs-137 662keV γ -rays, during which a significant increase in the electrical conductivity of the device is observed. MemSens circuit is proposed to allow a relatively real time and cost-effective radiation detection. This provides a first insight to the advancement of reliable memristors that could potentially be deployed in future low-power radiation sensing technologies for medical, personal protection, and other field applications.
Institute of Electrical and Electronics Engineers Inc.
Electrical and Computer Engineering
active, bipolar, crossbar, endurance, Low power, radiation, sol-gel
Abunahla, Heba; Mohammad, Baker; Mahmoud, Lama; Darweesh, Muna; Alhawari, Mohammad; Jaoude, Maguy Abi; and Hitt, George Wesley, "MemSens: Memristor-Based Radiation Sensor" (2018). All Works. 2365.
Indexed in Scopus